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发明授权
CN105190844B 半导体装置的制造方法 有权

半导体装置的制造方法
摘要：
将玻璃基板(3)经由粘合层(2)粘合到晶片(1)的、形成了正面单元结构的正面(1c)上。粘合层(2)在晶片(1)侧从晶片(1)的正面(1c)遍及到晶片(1)的倒角部(1b)和侧面形成，在玻璃基板(3)侧形成于玻璃基板(3)的第1面(3c)、不形成在玻璃基板(3)的倒角部(3b)和侧面(3a)。将晶片(1)的背面研磨后，在其背面形成背面单元结构。从玻璃基板(3)侧照射激光(13)，从粘合层(2)剥离玻璃基板(3)。去除粘合层(2)，通过切割切断晶片(1)，由此完成形成有薄型半导体器件的芯片。通过这样，容易将粘合于晶片的支撑基板剥离并且能够防止晶片的碎片、破损。
摘要（英）：

A glass substrate is bonded to a front surface of a wafer on which a front surface element structure is formed, with an adhesive layer interposed therebetween. An adhesive layer is formed on the wafer to extend from the front surface of the wafer to a chamfered portion and a side surface of the wafer. The adhesive layer is formed on a first surface of the glass substrate and is not formed on a chamfered portion and a side surface of the glass substrate. After the rear surface of the wafer is ground, a rear surface element structure is formed on the ground rear surface. A laser beam is radiated to the glass substrate and the glass substrate is peeled from the adhesive layer. The adhesive layer is removed and the wafer is cut by dicing. In this way, a chip having a thin semiconductor device formed thereon is completed.

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