The invention relates to a powder metallurgical preparation method of a high purity tantalum target material for semiconductors, especially a method for preparation of a high performance tantalum target material by a powder metallurgical process. The method is characterized by comprising the steps of: (1) loading to-be-sintered tantalum powder into a mold; (2) putting the mold into an electric spark sintering furnace to conduct spark plasma sintering; (3) at the end of sintering, conducting cooling to not higher than 160DEG C, and then carrying out discharge and mold release; and (4) machining the obtained tantalum target blank into a required size. With the method provided by the invention, an untextured internal structure with uniform particle size can be obtained, and the performance of the target material can be enhanced. The method provided by the invention has low sintering temperature, can rapidly sinter the compact tantalum target material, and the target material has the characteristics of uniform and small internal grain and no preferred orientation, etc.