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发明授权
CN105161429B 垂直除气通道 有权

垂直除气通道
摘要：
本申请涉及垂直除气通道。将InP外延材料直接接合到绝缘体上硅(SOI)晶片上，所述晶片在接合表面与绝缘体(掩埋氧化物或BOX)层之间具有垂直除气通道(VOC)。接近所述接合表面的H2O及其它分子迁移到最靠近的VOC且通过与桥接氧离子组合并形成稳定非桥接羟基基团对(Si‑OH)而快速淬灭于掩埋氧化物(BOX)层中。针对各种装置想象出各种通道大小及间距。
摘要（英）：

InP epitaxial material is directly bonded onto a Silicon-On-Insulator (SOI) wafer having Vertical Outgassing Channels (VOCs) between the bonding surface and the insulator (buried oxide, or BOX) layer. H2O and other molecules near the bonding surface migrate to the closest VOC and are quenched in the buried oxide (BOX) layer quickly by combining with bridging oxygen ions and forming pairs of stable nonbridging hydroxyl groups (Si—OH). Various sizes and spacings of channels are envisioned for various devices.

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