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发明公开
CN105070834A 一种基于掺杂型NiO空穴传输层的钙钛矿太阳能电池及其制备方法 有权 转让

一种基于掺杂型NiO空穴传输层的钙钛矿太阳能电池及其制备方法
摘要：
本发明公开了一种基于掺杂型NiO空穴传输层的反式平面结构钙钛矿太阳能结构及其制备方法。属于新材料太阳能电池领域，现有技术中钙钛矿太阳能电池存在电池稳定性差、光电转换性能差等问题，本发明提供了一种基于掺杂型NiO空穴传输层的反式平面结构钙钛矿太阳能电池，其包括在导电基底上沉积一层掺杂一定浓度的Mg、Li等杂原子的NiO致密层，作为空穴传输层，接着制备一层钙钛矿薄膜(APbX3，A＝CH3NH3+或CH(NH2)2+或两者混合物；X＝Cl-、Br-、I-或其混合物)，随后沉积一层电子传输层PCBM，接着沉积一层界面修饰层(包括LiF、BCP或TiOX的一种)，最后沉积一层金属电极(Ag或Al)。所述掺杂型NiO致密膜作为空穴传输层，电池性能稳定、高效、迟滞现象小，有利于实现钙钛矿太阳能电池产业化。
摘要（英）：

The invention discloses a trans-planar perovskite solar structure based on a doped NiO hole transport layer and a preparation method thereof, and belongs to the field of new material solar cells. The perovskite solar cell in the prior art has problems such as poor stability and poor photoelectric conversion performance. The invention provides a trans-planar perovskite solar cell based on a doped NiO hole transport layer. The preparation method of the solar cell comprises the following steps: depositing a NiO dense layer doped with Mg, Li and other hetero atoms of certain concentration on a conductive substrate as a hole transport layer; preparing a perovskite film, wherein the perovskite film is made of APbX3, A=CH3NH3+ or CH(NH2)2+ or the mixture of the two, and X=Cl-, Br- and I- or the mixture thereof; depositing an electron transport layer PCBM; depositing an interface modification layer (including one of LiF, BCP and TiOX); and finally, depositing a layer of metal electrode (Ag or Al). By using the doped NiO dense film as a hole transport layer, the cell has stable and efficient performance, and the hysteresis is small. Industrialization of the perovskite solar cell is easy to realize.

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