The invention relates to a 110kV-level thyristor valve body. Each thyristor is a switching device provided with a semiconductor element. The valve body is a rectangular frame in which thyristor valve body modules and a heat dissipation device are arranged. Each thyristor valve body module comprises an absorption capacitor, a water-cooling resistor, the thyristor and a trigger plate, wherein the absorption capacitors and the water cooling resistors are arranged along the transverse direction of the frame, and the thyristors and the trigger plates are connected with the heat dissipation device; and the thyristor valve body modules are parallelly arranged along the longitudinal direction of the frame. The 110kV-level thyristor valve body provided by the invention not only can meet requirements of ultrahigh voltage static reactive power compensation equipment for voltage and current capacity, but also has the advantages of good insulation performance, simple structure, reasonable layout and good heat dissipation effect.