The invented method for prepg. high critical temp. (90K) super-conductive film adopts super-vacuum system, single compound target, high atmospheric pressure low voltage d.c. magnetic controlled spattering, in situ epitaxial growing, and prepn. technology of in situ low temp. heat treatment. It is used for prepg. MBa2Cu3O7 type high critical temp. super-conductive oxide film (M=Y,EU,Gd,Tb,Dy,Ho,Er,Tm,Yb). The zero electric resistance critical temp. is as high as 92.7K, 77K, and critical (current density is up to 3.6 mA/Cm2. The invented film can be used in the prepn. of super-conductive electronic components and combined electronic components of super-conductor-semi-conductor.