Embodiments of an electrostatic discharge (ESD) protection device and a method of operating an ESD protection device are described. In one embodiment, an ESD protection device includes a bigFET configured to conduct an ESD pulse during an ESD event. The bigFET includes a backgate terminal, a source terminal, and a current distributor connected to the backgate terminal and the source terminal and configured to homogeneously activate a parasitic bipolar junction transistor of the bigFET in response to a current that is generated in the bigFET during the ESD pulse. Other embodiments are also described.