The invention relates to a method for the optical survey of pyramids (2) on surface-textured monocrystalline silicon wafers (1) wherein by using at least one light source (4) and at least one light receiver (5) the light (7) bent on the pyramids is received for determining geometric characteristics of the pyramids. Regardless from the latter or also in addition to the latter, light (9) that is scattered in a forward direction is optionally measured with a further light receiver (8) and the degree to which the surface of the silicon wafer is covered with pyramids is determined.