The invention relates to a semiconductor memory, and aims at providing a rapid reading method for a memory based on diode selection. According to the method, when the memory based on diode selection is at a read waiting state, a bit line is bias and at a voltage 1, a word line is bias and at a voltage 2, and the voltage 1 is equal or slightly larger than the voltage 2, so that a diode between the bit line and the word line is zero bias or at a reverse-bias state; when read operation needs performing on a storage unit, an induction node does not need precharging, the only thing needing to do is to set the word line bias at a low voltage, because the diode is a two-terminal device and only discharges electricity to the word line at one terminal, the bit line keeps extremely short time, and an induction amplifier also is at a pretreatment state in advance, so that the data in the storage unit can be read at a fastest speed.