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发明公开
CN104264132A 一种涂层导体单缓冲层及其制备方法 无效 - 撤回

一种涂层导体单缓冲层及其制备方法
摘要：
本发明公开了一种涂层导体单缓冲层，化学组成为LaZrxCeyOδ，其中x的取值为1～2，y的取值为0.2～2，δ＝1.5+2x+2y。另外，本发明还公开了该涂层导体单缓冲层的制备方法。本发明的单缓冲层既能阻隔金属离子扩散，又能传递织构，可以起到多层缓冲层的作用。本发明通过改变前驱体组份调节单缓冲层的晶格参数，使之更易于生长；能够更好与超导层的晶格参数匹配；同时LaZrxCeyOδ单缓冲层表面析出少量纳米点可以诱导超导层的生长。采用本发明的方法制备的LaZrxCeyOδ单缓冲层具有锐利的立方取向，表面光滑平整、无裂纹，有利于外延生长超导层。
摘要（英）：

The invention discloses a single buffer layer of a coated conductor. The chemical constitution of the single buffer layer is LaZrxCeyOdelta, wherein the value of x is 1-2; the value of y is 0.2-2; and delta= 1.5+2x+2y. In addition, the invention also discloses a preparation method of the single buffer layer of the coated conductor. The single buffer layer disclosed by the invention can block diffusion of metal ions, can transfer textures, and can play a role of a plurality of buffer layers. The lattice parameters of the single buffer layer are adjusted by changing precursor components, so that the single buffer layer is easier to grow, and can be well matched with the lattice parameters of a superconducting layer; meanwhile, a few of nano dots are separated out from the LaZrxCeyOdelta single buffer layer, and can induce the growth of the superconducting layer; and the LaZrxCeyOdelta single buffer layer prepared by using the method disclosed by the invention has sharp cube orientation, smooth and flat surface, free of a crack, and beneficial to epitaxial growth of the superconducting layer.

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