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发明公开
CN104232946A 高纯度镱、包含高纯度镱的溅射靶、含有高纯度镱的薄膜及高纯度镱的制造方法 无效 - 驳回 复审申请

高纯度镱、包含高纯度镱的溅射靶、含有高纯度镱的薄膜及高纯度镱的制造方法
摘要：
本发明涉及高纯度镱(Yb)、包含高纯度镱的溅射靶及含有高纯度镱的薄膜。本发明提供一种高纯度镱的制造方法，其特征在于，将粗氧化镱在真空中用包含蒸气压低的金属的还原性金属进行还原，并且选择性地将镱蒸馏，从而得到高纯度镱。本发明的目的在于提供能够有效且稳定地提供将蒸气压高、金属熔融状态下难以纯化的镱高纯度化的方法以及由该方法得到的高纯度镱以及包含高纯度材料镱的溅射靶以及含有高纯度材料镱的金属栅用薄膜。
摘要（英）：

The invention relates to high purity ytterbium, a sputtering target made thereof, thin film containing the same. Disclosed is a method for producing a high-purity ytterbium, which is characterized in that a high-purity ytterbium is obtained by reducing a crude ytterbium oxide in a vacuum with a reducing metal composed of a metal having a low vapor pressure, and selectively distilling ytterbium. This method enables to increase the purity of ytterbium, which has a high vapor pressure and is hardly purified in a molten state. Also disclosed is a high-purity ytterbium obtained by such a method. Further disclosed is a technique which enables to efficiently and stably obtain a sputtering target composed of a high-purity raw material ytterbium and a thin film for metal gates containing a high-purity raw material ytterbium.

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