The invention discloses a polishing compound for a semiconductor chip. The polishing compound is characterized by comprising the following substances in parts by weight: 2-5 parts of wax solvent, 6-13 parts of pickling agent, 0.3-0.6 part of phosphating solution, 1-3 parts of passivation solution, 1-3 parts of ceramic agent, 4-8 parts of calcium hydroxide, 1-6 parts of barium hydroxide, 7-16 parts of sodium hydroxide, 7-10 parts of sodium potassium tartrate tetrahydrate, 2-8 parts of dimethylaniline, 3-8 parts of calcium stearate, 4-13 parts of stearic acid and 1 part of dispersing agent. The chemical mechanical polishing compound for the semiconductor chip, disclosed by the invention, is relatively low in wear rate and corrosion degree of a dielectric layer and capable of improving the stability of polishing particles and keeping extremely high tungsten removal speed. The acting strength of a mechanical force is relatively reduced, so that the problems such as pits, corrosion, dielectric layer loss and the like are also reduced.