The invention provides a bidirectional power device comprising a switch circuit, a fault circuit, a driving circuit, and a power circuit. The switch circuit comprises at least a diode rectifier bridge and an insulated gate bipolar transistor (IGBT) connected with the diode rectifier bridge in an inverse parallel manner. The fault circuit is connected with the switch circuit, comprises a signal photoelectric coupler and a hysteresis comparator, and is used for determining whether overcurrent occurs to the switch circuit. The driving circuit is connected with the switch circuit and the fault circuit, comprises a driving photoelectric coupler and a transistor, and is used for driving the switch circuit. The power circuit is connected with the switch circuit, comprises an isolating diode, a first voltage-stabilizing diode, a second voltage-stabilizing diode, a voltage stabilizer, and a voltage-dividing resistor, provides reference voltage for overcurrent protection, and isolates heavy current from light current. The bidirectional power device is simple in circuit structure and employs modular design structure so as to effectively shorten design time. Integrally, the bidirectional power device has complete and superior functions and intelligence.