The invention relates to a measurement method for the heat conductivity of a thin film material under a stress effect of raman scattering. The working principle of the method is as follows: the suspended thin film material is adhered to a flexible substrate and an outer force along the in-plane direction is applied to the thin film material; the size of the outer force is controlled to realize the stress regulation of the thin film material. The property by which a thin film material raman spectrum can quickly respond to material temperature is used for obtaining the heat conductivity of the thin film material under the different stress effects. The method can be used for determining the heat conductivity of the thin film material under the different stress effects and can be used for researching the relation between the heat conductivity of the material and the stress acting on the material under a microscale.