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Invention Publication
CN103534598A 用于具有可移动的栅极结构的场效应晶体管的分析处理电路 有权

用于具有可移动的栅极结构的场效应晶体管的分析处理电路
Abstract:
本发明涉及一种用于具有可移动的栅极结构的场效应晶体管（11）的分析处理电路（1），所述分析处理电路具有测量电路（12），所述测量电路耦合在所述分析处理电路（1）的供电电压端子（VDD）和所述场效应晶体管（11）的漏极端子之间，并且所述测量电路被设计用于在测量端子（Iout）处输出测量信号，所述测量信号与流过所述场效应晶体管（11）的电流的电流强度有关。
Abstract(English):

The invention relates to an analysis circuit (1) for a field effect transistor (11) having a displaceable gate structure, having a measurement circuit (12) coupled between a supply voltage connection (VDD) of the analysis circuit (1) and a drain connection of the field effect transistor (11) and designed to output a measurement signal that is dependent on the current strength of a current flowing through the field effect transistor (11) to a measurement connection (1out).

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