The invention relates to a method for processing a reworked monocrystalline silicon wafer by a physical metallurgy method. The method is characterized by comprising the following steps: (1) adding a hydrogen peroxide solution with the hydrogen peroxide mass concentration of 4%-6% into a 1# pre-washing tank, immersing the reworked wafer, and ultrasonically washing the reworked wafer for 300s-550s under the power of 1.8kW and the frequency of 20-40kHz; (2) adding pure water into a 2# pre-washing tank, immersing the reworked wafer, controlling the temperature to be 55-65 DEG C, and ultrasonically rinsing the reworked wafer for 250s-300s under the power of 1.8kW and the frequency of 20-40kHz. A trial proves that dirty substances such as oil stains, white spots and handprints on the surface of the reworked silicon wafer are completely removed and the rejection rate of the silicon wafer is reduced by more than 30% after the method is adopted.