A power strangulation electrostatic discharge protection circuit comprises a silicon control rectifier and a control module, wherein the silicon control rectifier is electrically connected between a high voltage level and a low voltage level to carry a current path. The control module is parallel to the silicon control rectifier, and includes a P-type metal oxide semiconductor field effect transistor, an N-type metal oxide semiconductor field effect transistor, at least one output diode, a resistor, and a breakover serial. The silicon control rectifier can be a P-type or N-type substrate-triggered silicon control rectifier. By using such novel power strangulation electrostatic discharge protection circuit, the leakage current of the circuit can be significantly reduced, and processing area of elements can be eliminated.