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发明公开
CN103219444A 垂直式发光二极管及其制法与应用 无效 - 撤回

垂直式发光二极管及其制法与应用
摘要：
一种垂直式发光二极管，包括：导电基板；导电性类金刚石层，设置于该导电基板上；第一绝缘保护层，设置于该导电性类金刚石层上且设有第一开孔；第一电极，设置于该导电性类金刚石层上且位于该第一绝缘保护层的该第一开孔中；半导体外延层，设置于该第一电极上；第二绝缘保护层，设置于该第一绝缘保护层上且覆盖该半导体外延多层复合结构侧面，且设有第二开孔，以显露该半导体外延多层复合结构表面；以及第二电极，设置于该半导体外延多层复合结构上且位于该第二绝缘保护层的该第二开孔中。本发明还公开了关于上述垂直式发光二极管的制法。
摘要（英）：

A vertical light emitting diode comprises: a conductive substrate; a conductive diamond-like layer disposed on the conductive substrate; a first insulating protection layer disposed on the conductive diamond-like layer and provided with a first opening; a first electrode disposed on the conductive diamond-like layer and positioned in the first opening of the insulating protective layer; a semiconductor epitaxial layer disposed on the first electrode; a second insulating protection layer disposed on the first insulating protection layer, covering the side of a semiconductor epitaxial multilayer composite structure, provided with a second opening to expose the surface of the semiconductor epitaxial multilayer composite structure; and a second electrode disposed on the semiconductor epitaxial multilayer composite structure and positioned in the second opening of the insulating protection layer. The invention also discloses a preparation method of the vertical light emitting diode.

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