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发明公开
CN103219272A 形成半导体装置的方法 有权

形成半导体装置的方法
摘要：
根据本发明的实施方式提供了制造半导体装置的方法，包括从衬底的顶表面形成沟槽，所述衬底具有装置区域。与相对的底表面相比，装置区域更邻近顶表面。所述沟槽围绕装置区域的侧壁。所述沟槽填充以粘合剂。粘性层形成在衬底的顶表面上。承载件用粘性层附接。从底表面减薄衬底以便使粘性层的至少一部分以及装置区域的背部表面暴露。去除粘性层并且蚀刻粘合剂以便使装置区与的侧壁暴露。
摘要（英）：

In accordance with an embodiment of the present invention, a method of fabricating a semiconductor device includes forming a trench from a top surface of a substrate having a device region. The device region is adjacent to the top surface than an opposite bottom surface. The trench surrounds the sidewalls of the device region. The trench is filled with an adhesive. An adhesive layer is formed over the top surface of the substrate. A carrier is attached with the adhesive layer. The substrate is thinned from the bottom surface to expose at least a portion of the adhesive and a back surface of the device region. The adhesive layer is removed and adhesive is etched to expose a sidewall of the device region.

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