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CN102983240A 具有氧化锌基透明导电层的紫外发光二极管及其制备方法 无效 - 撤回

  • Patent Title: 具有氧化锌基透明导电层的紫外发光二极管及其制备方法
  • Patent Title (English): Ultraviolet light-emitting diode with transparent zinc oxide base conducting layer and fabrication method of ultraviolet light-emitting diode
  • Application No.: CN201210533023.X
    Application Date: 2012-12-11
  • Publication No.: CN102983240A
    Publication Date: 2013-03-20
  • Inventor: 张雄 , 王书昶 , 崔一平
  • Applicant: 东南大学
  • Applicant Address: 江苏省南京市江宁开发区东南大学路2号
  • Assignee: 东南大学
  • Current Assignee: 东南大学
  • Current Assignee Address: 江苏省南京市江宁开发区东南大学路2号
  • Agency: 南京苏高专利商标事务所
  • Agent 柏尚春
  • Main IPC: H01L33/14
  • IPC: H01L33/14 ;  H01L33/22 ;  H01L33/00
具有氧化锌基透明导电层的紫外发光二极管及其制备方法
Abstract:
本发明公开了一种具有透明导电层的紫外发光二极管芯片及其制备方法，芯片包括蓝宝石衬底、氮化铝缓冲层、n型铝镓氮层、铝镓氮多量子阱有源层、p型铝镓氮电子阻挡层、p型氮化镓层和氧化锌基透明导电层，以及在氧化锌基透明导电层上的p型金属电极，在n型铝镓氮上的n型金属电极。制备方法采用了金属有机物化学气相沉积和脉冲激光沉积法。本发明具有低电阻率，高紫外光透光率的优点，制备原料丰富，价格低廉，不污染环境。
Abstract(English):

The invention discloses an ultraviolet light-emitting diode chip with a transparent conducting layer, and a fabrication method of the ultraviolet light-emitting diode chip. The chip comprises a sapphire substrate, an aluminum nitride buffer layer, an n-type aluminum gallium nitrogen layer, an aluminum gallium nitrogen multiple quantum well active layer, a p-type aluminum gallium nitrogen electron barrier layer, a p-type gallium nitride layer, a transparent zinc oxide base conducting layer, a p-type metal electrode on the transparent zinc oxide base conducting layer, and an n-type metal electrode on the n-type aluminum gallium nitrogen layer. The fabrication method adopts a metallorganics chemical vapor deposition method and a pulsed laser deposition method. The ultraviolet light-emitting diode chip has the advantages of low resistivity and high ultraviolet light transmittance; and fabrication raw materials are rich, low in price and environment-friendly.

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