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CN102959754A 用于制造由第一和第二半导体的混合物组成的有机半导体层的方法 失效 - 放弃专利权

用于制造由第一和第二半导体的混合物组成的有机半导体层的方法
摘要：
用于制造由第一和第二有机半导体的混合物组成的有机半导体层(38)的这种方法，包括以下步骤：(i)制造由第一半导体组成的多孔固体本体(32)，其具有开口孔隙并且适用于容纳第二半导体；(ii)使包含溶解或分散于溶剂中的第二半导体的液体至少沉积在所述多孔固体本体的外表面上，该溶剂相对于第一半导体为惰性并且蒸发温度低于第二半导体的蒸发温度；以及(iii)当多孔固体本体(32)至少部分地吸收该液体时，加热至高于溶剂蒸发温度但低于第一和第二半导体蒸发温度的温度使溶剂蒸发。该多孔固体通过以下方法制备：将气泡注入溶解或分散于溶剂(B’)中的第一半导体的溶液中，然后蒸发所述溶剂(B’)，所述溶剂(B’)的温度低于气体的蒸发温度。
摘要（英）：

This process for producing an organic semiconductor layer (38), consisting of a mixture of a first and a second organic semiconductor, comprises the following steps: (i) production of a porous solid volume (32) consisting of a first semiconductor, of open porosity and suitable for receiving a second semiconductor; (ii) deposition, at least on an external surface of the porous solid volume, of a liquid comprising the second semiconductor dissolved or dispersed in a solvent, the solvent being inert with respect to the first semiconductor and having an evaporation temperature below the evaporation temperature of the second semiconductor; and (iii) once the porous solid volume (32) has been at least partially imbibed by the liquid, evaporation of the solvent by heating to a temperature above the evaporation temperature of said solvent but below the evaporation temperature of the first and second semiconductors. The porous solid is produced by injecting gas bubbles into a solution of the first semiconductor dissolved or dispersed in a solvent (B') and then evaporating said solvent (B'), the temperature of said solvent (B') being below the evaporation temperature of the gas.

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