A process for forming a flash memory device comprises that a semiconductor substrate comprises a first area and a second area, wherein a tunneling oxide layer and a floating gate layer are arranged on the surface of the first area; dielectric layers are formed on the surface of the floating gate layer of the first area and on the surface of the semiconductor substrate of the second area; ion implantation is conducted for the semiconductor substrate of the second area to form a first well region and a second well region, the first well region is adjacent to the second well region, and dielectric layers are removed after the ion implantation technology is conducted every time; part of a gate layer, a gate oxide layer, the dielectric layer and the floating gate layer of the first area are etched to form a first gate structure and a third gate structure, wherein the first gate structure and the third gate structure are adjacent; and part of a gate layer of the second area is etched to form a second gate structure, part of the gate layer and the dielectric layer of the third gate structure are etched simultaneously, and an opening is formed inside the third gate structure. The process for forming the flash memory device is simple in technology and low in cost.