The invention relates to a semiconductor heating ion migration tube structure for an ion mobility spectrometry detector, which belongs to the technical field of the ion migration spectrometry. The semiconductor heating ion migration tube structure for the ion mobility spectrometry detector comprises a ceramic insulating tube body and a tube cavity which is encircled inside the ceramic insulating tube body, wherein a semiconductor electric heating film is wrapped outside the ceramic insulating tube body. By utilizing the semiconductor electric heating film, the electric heat conversion efficiency of the ion migration tube is greatly improved, so that the overall electric power for the ion migration tube detector can be reduced; and meanwhile, the working temperature of the semiconductor electric heating film can reach up to more than 300 DEG C, when the ion migration tube is washed, the time can be effectively shortened. The semiconductor heating ion migration tube structure for the ion migration spectrometry detector is simple in structure, low in cost and wider in application range.