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CN102686770A 适于高温操作的相变存储器器件 无效 - 驳回

适于高温操作的相变存储器器件
摘要：
一种相变存储器单元，包括：底部电极；顶部电极，与底部电极分开；以及生长主导型相变材料，沉积于底部电极和顶部电极之间并且接触底部电极和顶部电极并且在其侧壁处由绝缘材料包围。重置状态的相变存储器单元仅包括在相变存储器单元的有效体积内的生长主导型相变材料的非晶相。
摘要（英）：

A phase change memory cell that includes a bottom electrode, a top electrode separated from the bottom electrode, and growth-dominated phase change material deposited between the bottom electrode and the top electrode and contacting the bottom electrode and the top electrode and surrounded by insulation material at sidewalls thereof. The phase change memory cell in a reset state only includes an amorphous phase of the growth-dominated phase change material within an active volume of the phase change memory cell.

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