The invention relates to a novel total inorganic oxide quantum dot LED based on FTO, and a manufacturing method thereof. The invention relates to the technical field of semiconductor illumination. The invention comprises technical schemes that: the LED structure is mainly composed of an LED anode, an LED cathode, carrier transferring layers between the LED anode and the LED cathode, an LED luminescent layer between the carrier transferring layers, and a glass substrate. The LED manufacturing method comprises the steps that: step 1, an FTO electrode (2) is prepared; step 2, an NiO membrane layer (3) is prepared; step 3, CdSe/CdS/ZnS quantum dots are synthesized, and a membrane is prepared; step 4, a ZnO nano-crystal membrane layer (5) is prepared; step 5, electrode evaporation plating is carried out; and finally, the novel total inorganic oxide quantum dot LED based on FTO is manufactured. With the technical scheme provided by the invention, the LED luminescent layer and the carrier transferring layers can be reasonably coupled; LED manufacturing technology can be simplified; and packaging cost can be reduced.