A two-dimensional photonic crystal laser according to the present invention includes a two-dimensional photonic crystal layer 15 having a base body made of Al[alpha]Ga1-[alpha]As (0<[alpha]<1) or (Al[beta]Ga1-[beta])[gamma]In1-[gamma]P (0<=[beta]<1, 0<[gamma]<1) with modified refractive index areas (air holes) 151 periodically arranged therein and an epitaxial growth layer 16 created on the two-dimensional photonic crystal layer 15 by an epitaxial method. Since Al[alpha]Ga1-[alpha]As and (Al[beta]Ga1-[beta])[gamma]In1-[gamma]P are solid even at high temperatures, the air holes 151 will not be deformed in the process of creating the epitaxial growth layer 16, so that the performance of the two-dimensional photonic crystal layer 15 as a resonator can be maintained at high levels.