The invention discloses a poly-schiff base for a resistance-type storage material, which includes a structural unit: FORMULA, wherein n is a positive integer, R0 is hydrogen atom, and fat or aromatic group of C1-C20, basic units X and Y are one or more than two combinations in specific structural units of (a) to (m). The poly-schiff base disclosed by the invention can be easily synthesized and processed, has excellent thermal stability and shows up the resistive transition phenomenon under the action of an external electrical field, thereby being capable of being used as the novel storage material for the resistance-type random storage. Compared with the traditional resistance-type storage material, the poly-schiff base disclosed by the invention completely takes full advantages of the polymer as the electric material, such as good processing performance, excellent extensibility, rich structure transformations and designs, and the like, and is the novel resistance-type storage material with development potential.