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发明授权
CN102214587B 制作多层式阵列型发光二极管的方法 失效 - 权利终止

制作多层式阵列型发光二极管的方法
摘要：
本发明公开了一种制作多层式阵列型发光二极管的方法，首先一基板经一适当方法制成，两导线架定位于该基板的导线架容置槽中，接着射出成型一封装模块以将该基板与两导线架包埋固定，接着将所述发光二极管晶粒配置于该基板的出光区表面上，再使所述二极管发光晶粒与该两导线架形成一电性回路，在该发光二极管上依序形成保护层及荧光层，最后直接射出透镜罩在封装模块上，其中所述发光二极管能用阵列排列的方式配置于该基板上，又本发明是以层叠式方式的封装方法制成多层式阵列型发光二极管。
摘要（英）：

The invention discloses a method for manufacturing a multi-layer array type light emitting diode. The method comprises the following steps that: a substrate is manufactured by a proper method; two lead wire frames are positioned in a lead wire frame accommodation slot of the substrate; an encapsulation module is ejected and formed so as to embed and fix the substrate and the two lead wire frames;light emitting diode crystalline grains are arranged on the surface of a light emergent region of the substrate; the light emitting diode crystalline grains and the two lead wire frames form an electric loop; a protection layer and a fluorescent layer are formed on the light emitting diode sequentially; and a lens cover is directly ejected to the encapsulation module, wherein the light emitting diode is arranged on the substrate in an array arrangement mode. The multi-layer array type light emitting diode is manufactured by a cascading encapsulation method.

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