The invention provides a static discharge protection device, comprising a plurality of NMOS pipes which are connected in parallel and are formed within the same deep trench and are grounded by means of the grid electrodes, wherein the drain electrode of each NMOS pipe is connected to a bonding pad, the source electrode and the base electrode of at least one NMOS pipe which is arranged on the central position are connected and are grounded by means of trench resistance. The base electrodes and source electrodes of other NMOS pipes are grounded. The static discharge protection device provided by the invention has the advantages that the conduction uniformity is good, the area is saved and the static discharge protection device is more suitable for high frequency application and analogue circuit application and etc.