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发明公开
CN101969016A 等离子体处理装置以及等离子体处理方法 无效 - 驳回

等离子体处理装置以及等离子体处理方法
摘要：
本发明提供一种不会因异常放电产生问题，并且能够解决因附着在电极上的反应生成物而引起的问题的平行平板型等离子体处理装置以及等离子体处理方法。等离子体处理装置(1)包括：收容基板(G)的处理腔室(2)；在处理腔室(2)内相对设置的下部电极(3)以及上部电极(20)；向上部电极(20)施加频率为10MHz以上的第一高频电功率的第一高频电源(14)；向下部电极(3)施加频率为2MHz以上小于10MHz的第二高频电功率的第二高频电源(17)；向上部电极(20)施加频率为400KHz以上1.6MHz以下的高频电功率的第三高频电源(33)；向处理腔室(2)内供给用于生成等离子体的处理气体的气体供给机构(28)；和对处理腔室(2)进行排气的排气机构(41)。
摘要（英）：

The invention provides a parallel flat-plate type plasma treatment device and a plasma treatment method which do not generate problem due to an abnormal discharging, and mainly solve the problem caused by reaction products attached on an electrode. The plasma treatment device (1) comprises: a treatment chamber (2) for storing a substrate (G); a lower electrode (3) and an upper electrode (20) relatively arranged in the treatment chamber (2); a first high-frequency power supply (14) for applying a first high-frequency electric power with a frequency more than 10 MHz to the lower electrode (3); a second high-frequency power supply (17) for applying a second high-frequency electric power with a frequency less than 10 MHz to the lower electrode (3); a third high-frequency power supply (33) for applying a high-frequency electric power with a frequency more than 400kHz and less than 1. 6 MHz to the second electrode (20); a gas supplying mechanism (28) for supplying treatment gas which is used to generate plasma to a treatment chamber (2); and a gas exhauster (41) for exhausting gas for the treatment chamber (2).

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