The invention relates to a method for performing rapid laser heating by using mask protection. The method comprises the following steps of: placing a silicon wafer of a polycrystalline silicone substrate into a PECVD deposition device for completing the deposition of an amorphous silicon film; depositing silicon nitride film to form a mask of the silicon nitride film; placing the amorphous silicon film which contains the mask into a protective container which contains inert gases; making the amorphous silicon film generate a light spot with the area of 1*1 cm<2> in a positive defocusing amount direction by using a pulse laser with a wavelength of 1.00 to 1.10 microns by adjusting the size of the light spot so as to heat the film for crystallization annealing; under the condition of maintaining the output power, making the film meet the requirement of the grain size for film epitaxial growth by adjusting a pulse frequency; and removing a silicon nitride protective layer by using the aqueous solution of hydrofluoric acid. The method makes the film epitaxial grains controllable, forms the mask by the deposition for preventing the film from oxidation, and improves the energy utilization rate of the laser in the substrate by the laser antireflection capability so as to reduce the energy consumption of the laser; therefore, the quality of the film is improved, and a laser cleaning process is optimized.