The invention discloses an integration-type passive element and a manufacturing method thereof. The integration-type passive element is sequentially stacked with a first insulation layer, a second insulation layer and a third insulation layer on the upper surface of a substrate; a first circuit layer is arranged in the first insulation layer and comprises at least one capacitor structure and at least one resistor structure; a second circuit layer is arranged in the second insulation layer, has the thickness within 5 to 50 microns and forms at least one first inductor structure; and a third circuit layer is arranged in the third insulation layer, has the thickness within 5 to 25 microns and forms at least one second inductor structure. The integration-type passive element can be manufactured by adopting a semiconductor rear section encapsulation substrate device, has the capacitor structure with the thickness more than 5 microns, is further beneficial to reducing the inductor loss and improving the inductor efficiency and can improve the integration density of the passive element and reduce the element size.