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发明公开
CN101771059A 背照式图像传感器及其制造方法 无效 - 撤回

背照式图像传感器及其制造方法
摘要：
本发明公开了一种背照式图像传感器及其制造方法。所述背照式图像传感器包括：隔离区和像素区，位于第一衬底的前侧；光电探测器和读出电路，位于所述像素区上；层间介电层和金属线，位于所述第一衬底的前侧；第二衬底，被接合到形成有所述金属线的所述第一衬底的前侧；像素分隔离子注入层，在所述第一衬底的背侧位于所述隔离区上；以及微透镜，在所述第一衬底的背侧位于所述光电探测器上。根据本发明的背照式图像传感器及其制造方法，能够通过离子注入方法稳定而有效地去除衬底的背侧。也就是说，本发明采用的是离子注入和分切方法而不是进行背侧研磨和回蚀工艺，因此不会出现边缘裸片故障和等离子体损害。
摘要（英）：

Disclosed are a back side illumination image sensor and a method for manufacturing the same. The back side illumination image sensor includes an isolation region and a pixel area on a front side of a first substrate; a photo detector and a readout circuitry on the pixel area; an interlayer dielectric layer and a metal line on the front side of the first substrate; a second substrate bonded to the front side of the first substrate formed with the metal line; a pixel division ion implantation layer on the isolation region at a back side of the first substrate; and a micro-lens on the photo detector at the back side of the first substrate. The back side of the substrate can be stably and efficiently removed through an ion implantation scheme. That is, the invention employs ion implantation and cleaving schemes without performing a back grinding and etch back process, so edge die fail and plasma damage may not occur.

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