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发明授权
CN101763899B 采用二极化存储元的三维只读存储器 无效 - 全部无效 转让

采用二极化存储元的三维只读存储器
摘要：
采用二级化存储元的三维只读存储器，本发明提出一种采用二级化存储元的三维只读存储器(3D-ROM)。该二极化存储元的准导通膜与上下电极具有不同界面。二极化存储元能提高3D-ROM单位阵列的大小，从而提高其存储密度和可集成性。
摘要（英）：

The invention provides a three-dimensional read-only memory (3D-ROM) using a polarizing memory cell. A quasi-conducting membrane of the polarizing memory cell has an interface different from that of an upper electrode and a lower electrode. The polarizing memory cell can enhance the unit array size of the three-dimensional read-only memory (3D-ROM), thereby enhancing the memory density and the integratability of the three-dimensional read-only memory (3D-ROM).

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