The invention relates to a manufacturing method of an embedded metal through-hole wafer and a device thereof, wherein the method comprising the following steps: linear metal penetrates through the through holes of a bearing device and the bottom part of a die, passes through the accommodating cavity of the die, penetrates through the through hole of another bearing device, and then is fixed at both ends of each bearing device to be strained. The raw material of the wafer is poured into the accommodating cavity of the die, the die is heated to the temperature of more than 100 DEG C of the softening point of the raw material of the wafer, and then the heat is preserved for at least 10 minutes. The die is cooled to the room temperature, and a wafer cylinder is taken out and is cut to obtain the wafer with the metal through hole. The manufacturing method of an embedded metal through hole wafer and the device thereof have low wafer manufacturing cost, help the a large number of wafer production, and can let the wafer widely used.