The invention provides an electrostatic discharging protection semiconductor device, at least comprises a high-voltage parasitic silicon controlled rectifier and a diode. The high-voltage parasitic silicon controlled rectifier comprises an anode and a cathode and the cathode of the high-voltage parasitic silicon controlled rectifier earths. The diode is coupled to the high-voltage parasitic silicon controlled rectifier in series and composed of an anode and a cathode. The anode of the diode is coupled to the anode of the high-voltage parasitic silicon controlled rectifier and the cathode of the diode is coupled to one terminal applied by positive voltage. The diode comprises a second conduction state area and the second conduction area comprises a plurality of strip or small-block conduction state areas apart from each other. The small-block can be of any shape and regularly or stochasticalally arranged.