A light-emitting device comprises a semiconductor layer (1) including a light-emitting layer (12), a rough section (14) formed on the light take-out surface of the semiconductor layer (1) and having projections and recesses formed with a pitch longer than the wavelength of the light emitted from the light-emitting layer (12) in the semiconductor layer (1), and a reflective layer formed on the opposite side to a light take-out surface and having a reflectance of 90% or more. From a light-emitting device having such a structure, light is taken out efficiently thanks to the multiplier effect of the reflective layer and the rough section.