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发明授权
CN101339941B 一种静电放电保护电路 有权 转让

一种静电放电保护电路
摘要：
本发明涉及一种静电放电保护电路，包括第一接线端(VDD)和第二接线端(VM)，其特征在于还包括寄生场效应晶体管，所述寄生场效应晶体管的栅极和漏极相连，其源极和衬底相连，并且所述寄生场效应晶体管连接在第一接线端和第二接线端之间；当第二接线端出现相对第一接线端的正静电脉冲电压时，通过正向导通所述寄生场效应晶体管的漏极到其衬底的寄生二极管来泻放静电；当第二接线端出现相对第一接线端的负静电脉冲电压绝对值大于所述寄生场效应晶体管的导通阈值时，通过导通所述寄生场效应晶体管来泻放静电。
摘要（英）：

The invention relates to an electrostatic discharge protection circuit which comprises a first terminal (VDD) and a second terminal (VM), and is characterized by further comprising a parasitic field effect transistor; a grid electrode and a drain electrode of the parasitic field effect transistor are connected, a source electrode and a substrate of the parasitic field effect transistor are connected, and the parasitic field effect transistor is connected between the first terminal and the second terminal; when the second terminal has positive electrostatic pulse voltage relative to the first terminal, static is discharged by positively conducting the drain electrode of the parasitic field effect transistor to a parasitic diode of the substrate of the parasitic field effect transistor; whenthe absolute value of the negative electrostatic pulse voltage of the second terminal relative to the first terminal is greater than the conduction threshold value of the parasitic field effect transistor, the static is discharged by conducting the parasitic field effect transistor.

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