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发明授权
CN101338452B 高密度碳纳米管阵列及其制备方法 有权

高密度碳纳米管阵列及其制备方法
摘要：
本发明涉及一种高密度碳纳米管阵列，该高密度碳纳米管阵列中的碳纳米管排列紧密，且定向排列，具有类一维单晶结构，密度为0.1～2.2g/cm3。本发明还涉及一种制备高密度碳纳米管阵列的方法，包括以下步骤：提供一碳纳米管阵列形成于一基底；沿着平行于基底的方向，施加压力挤压上述碳纳米管阵列，从而得到高密度碳纳米管阵列，该制备方法工序简单，易于实际应用、效率较高且制备的碳纳米管阵列的密度可以控制。
摘要（英）：

The invention relates to a high-density CNTs array. In the high-density CNTs array, the CNTS are arranged tightly and the array is directed. The CNTs array has a single-dimension-like single crystal structure. Density is 0.1 to 2.2g/cm<3>. The invention also relates to a preparation method of the high-density CNTs array. The preparation method comprises the procedures as follows: the CNTs array is provided and formed at a substrate; and pressure is exerted on the CNTs array in the direction parallel to the substrate so that the high-density CNTs array is made. The preparation method has simple procedures and higher efficiency and is easy for practical application. In addition, the density of the prepared CNTs array is controllable.

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