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CN101139702B 脉冲激光沉积制备硅基锐钛矿相TiO2薄膜的方法 失效 - 权利终止

脉冲激光沉积制备硅基锐钛矿相TiO2薄膜的方法
摘要：
本发明公开了一种脉冲激光沉积制备硅基锐钛矿相TiO2薄膜的方法。先将清洗后的Si基片和纯度为99.9％以上的二氧化钛靶放入真空室中，再将真空室抽真空到1×10-3-6×10-3Pa，通入氧气气氛，气体压力为0.5Pa-5Pa，并将Si基片加热到500-750℃；然后采用KrF准分子激光器，将激光通过透镜聚焦到二氧化钛靶材上，激光束的能量为340-750mJ，激光重复频率为1-10Hz，产生的二氧化钛等离子体向外发射至Si基片上，得到锐钛矿相的纳米二氧化钛薄膜。采用二氧化钛靶材，改变脉冲激光沉积过程中的参数，在硅基片上直接生长纯锐钛矿相的TiO2薄膜。本发明方法可以较好地与传统半导体工艺相衔接，将具有较好的应用前景。
摘要（英）：

The invention discloses a method for preparing a silicon-based anatase TiO2 film by pulse laser depositing, which comprises the procedures of: placing a cleaned Si chip and a TiO2 target with the purity more than 99.9 per cent into a vacuum chamber; vacuuming the vacuum chamber to the status of 1 multiplied by 10-3 minus 6 multiplied by 10-3 Pa, inputting 0.5Pa to 5Pa oxygen and heating the Si chip to 500 to 750 DEG C; focusing the laser from a KrF quasi-molecule laser machine onto the TiO2 target (the energy of the laser beam is 340 to 750mJ, the repeating frequency of the laser is 1 to 10 Hz); launching the TiO2 plasma generated outward onto the Si chip, and obtaining anatase nanometer TiO2 film. The invention adopts a TiO2 target to change the parameters in the pulse laser depositing, thus growing directly with pure anatase TiO2 film on silicon chips, which can be linked well with traditional semiconductor processes, and has a good application prospect.

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